4xDDR4 SD RAM SO-DIMM 8GB
- [25.3. 2025]Zmazať/ Upraviť/ Topovať
Ahojte. Predávam 4 kusy DDR4 8GB do notebooku. Posielam cez paketu. Alebo osobný odber v TV/MI
Bus Speed: 2666MHz
Capacity per Module: 8GB
Brand: SK Hynix
Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V) VPP - 2.5V (2.375V to 2.75V) VDDSPD=2.25V to 3.6V Functionality and operations comply with the DDR4 SDRAM datasheet 16 internal banks Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available Data transfer rates: PC4-2133 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL 8 or BC4 (Burst Chop) Supports ECC error correction and detection On-Die Termination ( ODT ) Temperature sensor with integrated SPD for ECC SO-DIMM This product is in compliance with the RoHS directive. Per DRAM Address ability is supported Internal Vref DQ level generation is available.
Bus Speed: 2666MHz
Capacity per Module: 8GB
Brand: SK Hynix
Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V) VPP - 2.5V (2.375V to 2.75V) VDDSPD=2.25V to 3.6V Functionality and operations comply with the DDR4 SDRAM datasheet 16 internal banks Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available Data transfer rates: PC4-2133 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL 8 or BC4 (Burst Chop) Supports ECC error correction and detection On-Die Termination ( ODT ) Temperature sensor with integrated SPD for ECC SO-DIMM This product is in compliance with the RoHS directive. Per DRAM Address ability is supported Internal Vref DQ level generation is available.
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